BSS87 데이터 시트보기 (PDF) - Philips Electronics

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BSS87

N-channel enhancement mode vertical D-MOS transistor

Philips Electronics 

Philips Semiconductors

N-channel enhancement mode vertical

D-MOS transistor

Product specification

BSS87

DESCRIPTION

N-channel vertical D-MOS transistor

in a SOT89 envelope. Designed

primarily as a line current interrupter

in telephone sets, it can also be

applied in other applications such as

in relays, line and high-speed

transformer drivers etc.

QUICK REFERENCE DATA

Drain-source voltage

Gate-source voltage (open drain)

Drain current (DC)

Total power dissipation up to Tamb = 25 °C

Drain-source on-resistance

ID = 400 mA; VGS = 10 V

FEATURES

• Direct interface to C-MOS, TTL,

etc.

• High-speed switching

• No secondary breakdown.

• Low RDS(on)

Transfer admittance

ID = 400 mA; VDS = 25 V

PINNING - SOT89

1 = source

2 = drain

3 = gate

VDS

±VGSO

ID

Ptot

max.

max.

max.

max.

200 V

20 V

280 mA

1W

RDS(on)

max.

typ.

6Ω

4.5 Ω

| Yfs|

typ. 350 mS

min. 140 mS

PIN CONFIGURATION

marking: KA

handbook, halfpage

1

2

3

Bottom view

d

g

s

MAM355

Fig.1 Simplified outline and symbol.

April 1995

2

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