BUV27 데이터 시트보기 (PDF) - ON Semiconductor
부품명
상세내역
제조사
BUV27 Datasheet PDF : 4 Pages
| |||
BUV27
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Symbol
Parameter
Test Conditions
ICER
ICEX
IEBO
VCEO(sus)
VEBO
VCE(sat)
(Note 2)
VBE(sat)
(Note 2)
Collector Cut−off
Current (RBE = 50 W)
Collector Cut−off Current
Emitter Cut−off Current (IC = 0)
Collector−Emitter Sustaining Voltage
Emitter−Base Voltage (IC = 0)
Collector−Emitter Saturation Voltage
Base−Emitter Saturation Voltage
VCE = 240 V, TC = 125°C
VCE = 240 V, VBE = −1.5 V, TC = 125°C
VBE = 5 V
IC = 0.2 A, L = 25 mH
IE = 50 mA
IC = 4 A, IB = 0.4 A
IC = 8 A, IB = 0.8 A
IC = 8 A, IB = 0.8 A
Resistive Load
ton
Turn−on Time
ts
Storage Time
tf
Fall Time
Inductive Load
VCC = 90 V, IC = 8 A
VBE = −6 V, IB1 = 0.8 A
RBB = 3.75 W
ts
Storage Time
tf
Fall Time
ts
Storage Time
tf
Fall Time
VCC = 90 V, IC = 8 A
IB1 = 0.8 A, VBE = −5 V
LB = 1 mH
VCC = 90 V, IC = 8 A
IB1 = 0.8 A, VBE = −5 V
LB = 1 mH, TJ = 125°C
2. Pulsed: Pulse Duration = 300 ms, Duty Cycle = 2%
Min
Typ
Max Unit
3.0
mA
1.0
mA
1.0
mA
120
V
7.0
30
V
0.7
V
1.5
2.0
V
0.4
0.8
ms
0.5
1.2
ms
0.12
0.25
ms
0.6
ms
0.04
2.0
0.15
http://onsemi.com
2
Share Link: 