BYD53G 데이터 시트보기 (PDF) - Philips Electronics
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BYD53G Datasheet PDF : 12 Pages
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Philips Semiconductors
Fast soft-recovery controlled
avalanche rectifiers
Product specification
BYD53 series
SYMBOL
PARAMETER
IFRM
repetitive peak forward current
BYD53D to M
BYD53U and V
IFSM
non-repetitive peak forward current
ERSM
Tstg
Tj
non-repetitive peak reverse
avalanche energy
storage temperature
junction temperature
CONDITIONS
Tamb = 65 °C; see Figs 8 and 9
t = 10 ms half sine wave;
Tj = Tj max prior to surge;
VR = VRRMmax
L = 120 mH; Tj = Tj max prior to
surge; inductive load switched off
see Fig.12
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
VF
VF
V(BR)R
IR
forward voltage
BYD53D to M
BYD53U and V
forward voltage
BYD53D to M
BYD53U and V
reverse avalanche
breakdown voltage
BYD53D
BYD53G
BYD53J
BYD53K
BYD53M
BYD53U
BYD53V
reverse current
trr
reverse recovery time
BYD53D to J
BYD53K and M
BYD53U and V
Cd
diode capacitance
CONDITIONS
IF = 1 A; Tj = Tj max;
see Figs 13 and 14
IF = 1 A; see Figs 13 and 14
IR = 0.1 mA
VR = VRRMmax; see Fig.15
VR = VRRMmax; Tj = 165 °C;
see Fig.15
when switched from IF = 0.5 A
to IR = 1 A; measured at
IR = 0.25 A; see Fig.18
f = 1 MHz; VR = 0; see Fig.16
MIN.
−
−
−
−
300
500
700
900
1 100
1 300
1 500
−
−
−
−
−
−
MIN.
−
−
−
−
−65
−65
TYP.
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
20
MAX. UNIT
3.6 A
4.45 A
5A
10 mJ
+175 °C
+175 °C
MAX. UNIT
2.1 V
1.7 V
3.6 V
2.3 V
−V
−V
−V
−V
−V
−V
−V
1 µA
100 µA
30 ns
75 ns
150 ns
− pF
1998 Dec 04
3
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