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BYG80 데이터 시트보기 (PDF) - Philips Electronics

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BYG80 Datasheet PDF : 20 Pages
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Philips Semiconductors
Ultra fast low-loss
controlled avalanche rectifiers
Product specification
BYG80 series
103
handbook, halfpage
IR
(µA)
102
10
MGC549
102
handbook, halfpage
Cd
(pF)
10
MGL078
(1)
(2)
(3)
1
0
100
Tj (°C)
200
BYG80F to J
VR = VRMMmax.
Fig.25 Reverse current as a function of junction
temperature; maximum values.
1
1
10
f = 1 MHz; Tj = 25 °C.
(1) BYG80A to D
(2) BYG80F and G
(3) BYG80J
102
103
VR (V)
Fig.26 Diode capacitance as a function of reverse
voltage; typical values.
50
4.5
50
2.5
1.25
MSB213
handboIoFk, halfpage
dI F
dt
IR
trr
dI R
dt
10% t
100%
MGC499
Dimensions in mm.
Fig.27 Printed-circuit board for surface mounting.
1997 Nov 25
13
Fig.28 Reverse recovery definitions.

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