CHA2066RBF 데이터 시트보기 (PDF) - United Monolithic Semiconductors

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CHA2066RBF

10-16GHz Self biased Low Noise Amplifier

United Monolithic Semiconductors 

CHA2066RBF

10-16GHz Self biased Low Noise Amplifier

GaAs Monolithic Microwave IC in SMD leadless package

Description

Main Features

The monolithic microwave IC (MMIC) in the

package is a two-stage self biased wide

band monolithic low noise amplifier.

The MMIC is manufactured with a standard

PM-HEMT process: 0.25µm gate length,

via holes through the substrate, air bridges

and electron beam gate lithography.

■ Broad band performance: 10-16GHz

■ Gain = 15dB (typical)

■ Noise Figure 2.0dB (typical)

■ Output power (P-1dB) 13dBm (typical)

■ Return loss < -6dB

■ SMD leadless package

■ Dimensions: 5.08 x 5.08 x 0.97 mm3

It is supplied in a new SMD leadless chip

carrier.

SMD Package Dimensions

"Please note that PIN 1 is located in the lower left corner of the package (front-side view) for all SMD-type packages from United Monolithic Semiconductors. It is indicated

by a triangle on the package lid. Starting with PIN 1 the other pads are numbered counter-clockwise (front-side view). ATTENTION: The dot on the backside of the

package (i.e. side with metallic pads) is just for fabrication purposes and does NOT indicate the location of PIN 1."

Ref. : DSCHA2066RBF2317 -13-Nov.-02

1/8

Specifications subject to change without notice

United Monolithic Semiconductors S.A.S.

Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France

Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09

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