M58LW032D 데이터 시트보기 (PDF) - STMicroelectronics
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M58LW032D Datasheet PDF : 50 Pages
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M58LW032D
Table 8. Byte-Wide Read Protection Register
Word
Use
A8
A7
A6
A5
A4
A3
A2
A1
Lock
Factory, User
1
0
0
0
0
0
0
0
Lock
Factory, User
1
0
0
0
0
0
0
0
0
Factory (Unique ID)
1
0
0
0
0
0
0
1
1
Factory (Unique ID)
1
0
0
0
0
0
0
1
2
Factory (Unique ID)
1
0
0
0
0
0
1
0
3
Factory (Unique ID)
1
0
0
0
0
0
1
0
4
Factory (Unique ID)
1
0
0
0
0
0
1
1
5
Factory (Unique ID)
1
0
0
0
0
0
1
1
6
Factory (Unique ID)
1
0
0
0
0
1
0
0
7
Factory (Unique ID)
1
0
0
0
0
1
0
0
8
User
1
0
0
0
0
1
0
1
9
User
1
0
0
0
0
1
0
1
A
User
1
0
0
0
0
1
1
0
B
User
1
0
0
0
0
1
1
0
C
User
1
0
0
0
0
1
1
1
D
User
1
0
0
0
0
1
1
1
E
User
1
0
0
0
1
0
0
0
F
User
1
0
0
0
1
0
0
0
Table 9. Program, Erase Times and Program Erase Endurance Cycles
Parameters
M58LW032D
Min
Typ(1,2)
Max(2)
Unit
Block (1Mb) Erase
1.2
4.8(4)
s
Chip Program (Write to Buffer)
24
72(4)
s
Chip Erase Time
37
110 (4)
s
Program Write Buffer
192 (3)
576 (4)
µs
Word/Byte Program Time
(Word/Byte Program command)
16
48 (4)
µs
Program Suspend Latency Time
1
20 (5)
µs
Erase Suspend Latency Time
1
25 (5)
µs
Block Protect Time
18
30 (5)
µs
Blocks Unprotect Time
0.75
1.2 (5)
s
Program/Erase Cycles (per block)
100,000
cycles
Data Retention
20
years
Note: 1. Typical values measured at room temperature and nominal voltages.
2. Sampled, but not 100% tested.
3. Effective byte programming time 6µs, effective word programming time 12µs.
4. Maximum value measured at worst case conditions for both temperature and VDD after 100,000 program/erase cycles.
5. Maximum value measured at worst case conditions for both temperature and VDD.
19/50
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