10N120BND 데이터 시트보기 (PDF) - Fairchild Semiconductor

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10N120BND

35A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

Fairchild Semiconductor 

HGTG10N120BND

Electrical Specifications TC = 25oC, Unless Otherwise Specified (Continued)

PARAMETER

Current Turn-On Delay Time

Current Rise Time

Current Turn-Off Delay Time

Current Fall Time

Turn-On Energy

Turn-Off Energy (Note 3)

Diode Forward Voltage

Diode Reverse Recovery Time

Thermal Resistance Junction To Case

SYMBOL

td(ON)I

trI

td(OFF)I

tfI

EON

EOFF

V EC

t rr

RθJC

TEST CONDITIONS

IGBT and Diode at TJ = 150oC

ICE = 10A

VCE = 960V

VGE = 15V

RG = 10Ω

L = 2mH

Test Circuit (Figure 20)

IEC = 10A

IEC = 10A, dIEC/dt = 200A/µs

IEC = 1A, dIEC/dt = 200A/µs

IGBT

Diode

MIN TYP MAX UNITS

-

21

25

ns

-

11

15

ns

-

190

250

ns

-

140

200

ns

-

1.75

2.3

mJ

-

1.1

1.4

mJ

-

2.55

3.2

V

-

57

70

ns

-

32

40

ns

-

-

0.42

oC/W

-

-

1.25

oC/W

NOTE:

3. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending

at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement

of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.

Typical Performance Curves Unless Otherwise Specified

35

VGE = 15V

30

25

20

15

10

5

0

25

50

75

100

125

150

TC, CASE TEMPERATURE (oC)

FIGURE 1. DC COLLECTOR CURRENT vs CASE

TEMPERATURE

60

50

TJ = 150oC, RG = 10Ω, VG = 15V, L = 400µH

40

30

20

10

0

0

200 400 600 800 1000 1200 1400

VCE, COLLECTOR TO EMITTER VOLTAGE (V)

FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA

©2001 Fairchild Semiconductor Corporation

HGTG10N120BND Rev. B

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