DN050S 데이터 시트보기 (PDF) - Kodenshi Auk Co., LTD
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DN050S Datasheet PDF : 4 Pages
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DN050S
NPN Silicon Transistor
Features
• Extremely low collector-to-emitter
saturation voltage
( VCE(SAT)=0.07V Typ. @IC/IB=100mA/10mA)
• Suitable for low voltage large current drivers
• Complementary pair with DP050S
• Switching Application.
Ordering Information
Type NO.
DN050S
Marking
N02 □
①②
① Device Code ② Year&Week Code
PIN Connection
3
1
2
SOT-23F
Package Code
SOT-23F
Absolute maximum ratings
Characteristic
Collector-Base voltage
Collector-Emitter voltage
Emitter-Base voltage
Collector current
Collector dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Ratings
15
12
5
500
200
150
-55~150
(Ta=25°C)
Unit
V
V
V
mA
mW
°C
°C
Electrical Characteristics
Characteristic
Symbol
Test Condition
Collector-Base breakdown voltage
BVCBO IC=50μA, IE=0
Collector-Emitter breakdown voltage BVCEO IC=1mA, IB=0
Emitter-Base breakdown voltage
BVEBO IE=50μA, IC=0
Collector cut-off current
ICBO
VCB=12V, IE=0
Emitter cut-off current
IEBO
VEB=5V, IC=0
DC current gain
hFE1
hFE2
VCE=1V, IC=100mA
VCE=1V, IC=500mA
Collector-Emitter saturation voltage VCE(sat) IC=100mA, IB=10mA
Base-Emitter saturation voltage
VBE(sat) IC=100mA, IB=10mA
Transition frequency
fT
VCE=5V, IC=20mA
Collector output capacitance
Cob
VCB=10V, IE=0, f=1MHz
(Ta=25°C)
Min. Typ. Max. Unit
15
-
-
V
12
-
-
V
5
-
-
V
-
-
0.1
μA
-
-
0.1
μA
200
-
450
-
70
-
-
-
-
-
0.25
V
-
-
1.2
V
-
120
-
MHz
-
4.5
-
pF
KSD-T5C073-000
1
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