DS3234(2006) 데이터 시트보기 (PDF) - Maxim Integrated
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DS3234 Datasheet PDF : 20 Pages
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Extremely Accurate SPI Bus RTC with
Integrated Crystal and SRAM
ELECTRICAL CHARACTERISTICS (continued)
(VCC = 2.0V to 5.5V, VCC = active supply (see Table 1), TA = -40°C to +85°C, unless otherwise noted.) (Typical values are at VCC =
3.3V, VBAT = 3.0V, and TA = +25°C, unless otherwise noted. TCXO operation guaranteed from 2.3V to 5.5V on VCC and 2.3V to 3.8V on
VBAT.) (Notes 1, 2)
PARAMETER
SYMBOL
CONDITIONS
MIN TYP MAX UNITS
Logic 0 Output, 32kHz
Logic 1 Output, DOUT
Logic 0 Output, DOUT, INT/SQW
Logic 0 Output, RST
VOL
VOH
VOL
VOL
IOL = 1mA
IOH = -1.0mA
IOL = 3mA
IOL = 1.0mA
0.85 x VCC
0.4
V
V
0.4
V
0.4
V
Output Leakage Current 32kHz,
INT/SQW, DOUT
ILO
Output high impedance
-1
0
+1
µA
Input Leakage DIN, CS, SCLK
RST Pin I/O Leakage
ILI
IOL
RST high impedance (Note 5)
-1
+1
-200
+10
TCXO (VCC = 2.3V to 5.5V, VBAT = 2.3V to 3.8V, TA = -40°C to +85°C, unless otherwise noted.) (Notes 1 and 2)
Output Frequency
fOUT VCC = 3.3V or VBAT = 3.3V
32.768
Frequency Stability vs.
Temperature
∆f/fOUT
VCC = 3.3V or
VBAT = 3.3V
0°C to +40°C
-2
-40°C to 0°C and -3.5
+40°C to +85°C
+2
+3.5
µA
µA
kHz
ppm
Frequency Stability vs. Voltage
∆f/V
-40°C
1
ppm/V
0.7
Trim Register Frequency
Sensitivity per LSB
∆f/LSB Specified at:
+25°C
+70°C
0.1
ppm
0.4
+85°C
0.8
Temperature Accuracy
Temp
-3
+3
°C
Crystal Aging
∆f/fOUT
After reflow,
not production tested
First year
0–10 years
±1.0
±5.0
ppm
ELECTRICAL CHARACTERISTICS
(VCC = 0V, VBAT = 2.0V to 3.8V, TA = -40°C to +85°C, unless otherwise noted.) (Note 1)
PARAMETER
SYMBOL
CONDITIONS
MIN
Battery Current
(Note 4)
Temperature Conversion Current
Data-Retention Current
IBAT EOSC = 0, BBSQW = 0
ITC
IBATTC
EOSC = 0, BBSQW = 0
EOSC = 1
VBAT = 3.4V
VBAT = 3.8V
TYP MAX UNITS
1.5
2.3
µA
1.5
2.5
400
µA
100
nA
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