E28F128J3A-110 데이터 시트보기 (PDF) - Intel

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E28F128J3A-110

Intel StrataFlash® Memory (J3)

Intel 

256-Mbit J3 (x8/x16)

Table 6. DC Current Characteristics (Sheet 2 of 2)

VCCQ

2.7 - 3.6V

VCC

2.7 - 3.6V

Test Conditions

Symbol

Parameter

Typ Max Unit

ICCE

ICCWS

ICCES

VCC Block Erase or Clear

Block Lock-Bits Current

VCC Program Suspend or

Block Erase Suspend

Current

35 70 mA CMOS Inputs, VPEN = VCC

40 80 mA TTL Inputs, VPEN = VCC

10 mA Device is enabled (see Table 13)

NOTES:

1. All currents are in RMS unless otherwise noted. These currents are valid for all product versions (packages and

speeds). Contact Intel’s Application Support Hotline or your local sales office for information about typical

specifications.

2. Includes STS.

3. CMOS inputs are either VCC ± 0.2 V or GND ± 0.2 V. TTL inputs are either VIL or VIH.

4. Sampled, not 100% tested.

5. ICCWS and ICCES are specified with the device selected. If the device is read or written while in erase suspend

mode, the device’s current draw is ICCR and ICCWS

Notes

1,4

1,5

6.2

DC Voltage Characteristics

Table 7. DC Voltage Characteristics

Symbol

Parameter

VIL

Input Low Voltage

VIH

Input High Voltage

VOL

Output Low Voltage

VOH

Output High Voltage

VPENLK

VPEN Lockout during Program,

Erase and Lock-Bit Operations

Min

–0.5

2.0

Max

0.8

VCCQ

+ 0.5

0.4

0.2

0.85 ×

VCCQ

VCCQ

– 0.2

2.2

Unit

V

Test Conditions

V

V

VCCQ = VCCQ Min

IOL = 2 mA

V

VCCQ = VCCQ Min

IOL = 100 µA

V

VCCQ = VCCQ Min

IOH = –2.5 mA

V

VCCQ = VCCQ Min

IOH = –100 µA

V

Notes

2, 6

2,6

1,2

1,2

2,3,4,7

20

Datasheet

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