AS29LV800 데이터 시트보기 (PDF) - Alliance Semiconductor

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AS29LV800

3V 1M × 8/512K × 16 CMOS Flash EEPROM

Alliance Semiconductor 

March 2001

®

AC parameters — temporary sector unprotect

JEDEC

Symbol

Std Symbol

tVIDR

tRSP

Parameter

VID rise and fall time

RESET setup time for temporary sector

unprotect

Temporary sector unprotect waveform

RESET

CE

10V

0 or 3V

tVIDR

Program/erase command sequence

WE

tRSP

RY/BY

AC parameters — RESET

JEDEC

Symbol

Std Symbol

tRP

tRH

tREADY

RESET waveform

RESET

RY/BY

Parameter

RESET pulse

RESET High time before Read

RESET Low to Read mode

tRP

tREADY

DQ

status

status

valid data

AS29LV800

-70R/80/90/120

Min

Max

Unit

500

-

ns

4

-

µs

tVIDR

0 or 3V

-70R/80/90/120

Min

Max

Unit

500

-

ns

-

50

ns

-

10

µs

tRP

tRH

valid data

Erase waveform

Addresses

CE

OE

WE

Data

tWC

555h

tAS

2AAh

555h

tAH

×16 mode

555h

2AAh

Sector address

tGHWL

tWP

tWC

tWPH

tCS

tDH

10h for Chip Erase

AAh

55h

80h

AAh

55h

30h

tDS

3/22/01; V.1.0

Alliance Semiconductor

P. 19 of 25

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