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RF2174 데이터 시트보기 (PDF) - RF Micro Devices
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RF2174
3V DCS POWER AMPLIFIER
RF Micro Devices
RF2174 Datasheet PDF : 12 Pages
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RF2174
Application Schematic
Preliminary
V
CC
Instead of a stripline,
12 pF
an inductor of ~6 nH
2
1 nF
Very close
to
pin 15/16
can be used
V
CC
AT_EN
RF IN
33 pF
Distance between
edge of device and
capacitor is 0.240" to
improve the "off"
isolation
V
CC
1.0 pF
1 16 15 14 13
2
12
3
11
4
10
15 pF
Quarter wave
length
Instead of a stripline, an
inductor of 2.2 nH can
be used
50
Ω µ
strip
33 pF
3.6 pF
4.3 pF
Note 1
1.3 pF
1.3 pF
Note 1
56 7 89
V
CC
Distance between
edge of device and
capacitor is 0.080"
Distance center to
center of capacitors
0.220"
RF OUT
15 pF 15 pF
15 pF
15 pF
APC
Note:
All capacitors are standard 0402 multi layer chip
Note 1:
Using a hi-Q capacitor will increase efficiency slightly
2-238
Rev A6 010720
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