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EL2021 데이터 시트보기 (PDF) - Intersil

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EL2021
Intersil
Intersil Intersil
EL2021 Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
EL2021
Absolute Maximum Ratings (TA = 25°C)
V+
Supply Voltage . . . . . . . . . . . . . . . . . . . . . -0.3V to +16V
V-
Supply Voltage . . . . . . . . . . . . . . . . . . . . . 0.03V to -16V
B+, B- Supply Voltages . . . . . . . . . . . . . . . . . . . . . . . . V- to V+
Sense+ Input Voltages. . . . . . . . . . . . . (-2V + B+) to (0.3V +B+)
Sense- Input Voltages. . . . . . . . . . . . . . (-0.3V + B-) to (2V + B-)
E, VSR,
OE, Data Input Voltages. . . . . . . . . . . . . . . . . . . . . . . . -0.3 to +6V
VCH, VCL Input Voltages . . . . . . . . . . . . . . . . B- to B+ and V- to V+
Sense Out Output Current. . . . . . . . . . . . . . . . . . -10mA to +10mA
VOUT, Drive+,
Drive- Output Currents. . . . . . . . . . . . . . . . . . . . -45mA to +45mA
TJ
Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . 150°C
TA
Operating Ambient
Temperature Range. . . . . . . . . . . . . . . . . . . . 0°C to +75°C
TST Storage Temperature. . . . . . . . . . . . . . . . .-65°C to +150°C
PD
Power Dissipation (TA = 25°C)
(See Curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1.8W
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
IMPORTANT NOTE: All parameters having Min/Max specifications are guaranteed. Typical values are for information purposes only. Unless otherwise noted, all tests
are at the specified temperature and are pulsed tests, therefore: TJ = TC = TA
DC Electrical Specifications
TA = 25°C, V+ = 15, V- = -10V, B+ = VCH +3.6V, B- = VCL -3.6V, No Load. Data and OE levels are:
L = 2.0V and H = 3.0V (CMOS thresholds). E levels are: L = 1.5V and H = 3.5V. All tests done using
2N2222 and 2N2907 output transistors with Beta>40 @ IC = 400mA and Beta>27 @ IC = 500mA and
VCE = 3.1V. OE and E low.
PARAMETER
DESCRIPTION
CONDITIONS
MIN
TYP
MAX UNITS
IS
IS, disabled
IVCH
V+, -Supply Currents
V+, -Supply Currents
VCH Input Current
VCH = 5V, VCL = 0, VSR = 2.5V, Data = H or L
VCH = 11V, VCL = -6V, VSR = 5V, Data = H or L
VCH = -6V, VCL = 11V, VSR+2.5V, Data = H or L
VCH = 5V, VCL = 0V, VSR = 2.5V, Data = H or L, E = H
VCH = -1V to +7.5V, VCL = 0V, VSR = 5V,
Data = H or L
15
25
30
mA
21
33
45
mA
15
25
30
mA
0
0.5
2.5
mA
-20
5
20
µA
IVCL
VCL Input Current
VCL = -3.5V to +3.5V, VCH = 0V, VSR = 5V,
Data = H or L
-20
-5
20
µA
IDATA
IOE
IE
IVSR
±ISENSE
IB+, IB-
VO
ISENSE+
ISENSE-
VO, SENSE
Data Input Current
VCH = 5V, VCL = 0V, VSR = 5V, Data = 0 or 5V
-50
5
50
µA
OE Input Current
VCH = 5V, VCL = 0V, VSR = 5V, Data = L, OE = 0V or 5V
-20
5
20
µA
E Input Current
VCH = 5V, VCL = 0V, VSR = 5V, Data = L, E = 0V or 5V
-20
2
20
µA
VSR Input Current
VCH = 5V, VCL = 0V, Data = L, VSR = 0V or 5V
-20
2
20
µA
Sense Input Currents VCH = 5V, VCL = 0V, VSR = 5V, Data = 0V or 5V
-20
5
20
µA
B+, B- Input Currents VCH = 5V, VCL = 0V, Data = L, VSR = 5V
-20
5
20
µA
Output Voltage
V+ = 14.5V, V- = -9.5V
VCH = 5V, VCL = 0, VSR = 1V, Data = L,
Output Current = -100mA, 0mA, or +100mA
Output Current = -400mA or +400mA
Output Current = -500mA or +500mA
VCH = 5V, VCL = 0, VSR = 1V, Data = H
Output Current = -100mA, 0mA, or +100mA
Output Current = -400mA or +400mA
Output Current = -500mA or +500mA
VCH = 11V, VCL = -6V, VSR = 1V, IOUT = 0, Data = L
VCH = 11V, VCL = -6V, VSR = 1V, IOUT = 0, Data = H
-50
-300
-600
4.95
4.7
4.4
-6.1
10.9
50
mV
300
mV
600
mV
5.05
V
5.3
V
5.6
V
-5.9
V
11.1
V
+ISENSE Threshold VCH = 5V, VCL = 0, VSR = 2.5V, RSENSE = 1, Data = H
400
450
600
mA
-ISENSE Threshold
VCH = 5V, VCL = 0, VSR = 2.5V, RSENSE = 1, Data = L
-400
-450
-600
mA
Sense Out Levels
VCH = 5V, VCL = 0, VSR = 2.5V, Data L or H,
Output Current = -350mA or +350mA
Output Current = -550mA or +550mA
0
0.6
V
3.5
5.0
V
IOUT,TRI
High-Impedance
Output Leakage
VCH = 5V, VCL = 0, VSR = 2.5V, Data = L, OE = H,
Output Voltage = -2.5V or +7.5V
-100
5
100
µA
2

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