EM6A9320BI-3.6 데이터 시트보기 (PDF) - Etron Technology

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EM6A9320BI-3.6

4M x 32 DDR SDRAM

Etron Technology 

EtronTech 4Mx32 DDR SDRAM

EM6A9320

D.C. Characteristics

(VDD = 2.8V ± 5%, TA = 0~70 °C)

Parameter & Test Condition

2.8 3.0 3.3 3.5 3.6 4 5

Symbol

Unit

Max

OPERATING CURRENT : One bank; Active-

Precharge; tRC=tRC(min); tCK=tCK(min); DQ,DM and

DQS inputs changing once per clock cycle; Address

and control inputs changing once every two clock

cycles.

IDD0 330 320 280 260 250 180 160 mA

OPERATING CURRENT : One bank; Active-Read-

Precharge; BL=4; CL=4; tRCDRD=4*tCK;

tRC=tRC(min); tCK=tCK(min); lout=0mA; Address and

control inputs changing once per clock cycle

IDD1 450 440 380 360 340 260 240 mA

PRECHARGE POWER-DOWN STANDBY

CURRENT: All banks idle; power-down mode;

tCK=tCK(min); CKE=LOW

IDD2P 50 50 50 50 50 45 40 mA

IDLE STANDLY CURRENT : CKE = HIGH;

CS#=HIGH(DESELECT); All banks idle; tCK=tCK(min);

Address and control inputs changing once per clock

IDD2N

100 100 100 100 100

80

80 mA

cycle; VIN=VREF for DQ, DQS and DM

ACTIVE POWER-DOWN STANDBY CURRENT : one

bank active; power-down mode; CKE=LOW;

IDD3P 50 50 50 50 50

tCK=tCK(min)

45 40 mA

ACTIVE STANDBY CURRENT :

CS#=HIGH;CKE=HIGH; one bank active ;

tRC=tRC(max);tCK=tCK(min);Address and control inputs IDD3N 140 135 120 110 110 100 100 mA

changing once per clock cycle; DQ,DQS,and DM

inputs changing twice per clock cycle

OPERATING CURRENT BURST READ : BL=2;

READS; Continuous burst; one bank active; Address

and control inputs changing once per clock cycle;

tCK=tCK(min); lout=0mA;50% of data changing on

every transfer

IDD4R 560 540 480 450 450 440 420 mA

OPERATING CURRENT BURST Write : BL=2;

WRITES; Continuous Burst ;one bank active; address

and control inputs changing once per clock cycle;

tCK=tCK(min); DQ,DQS,and DM changing twice per

clock cycle; 50% of data changing on every transfer

IDD4W

470 450 400 370 360

300 270 mA

AUTO REFRESH CURRENT : tRC=tRFC(min);

tCK=tCK(min)

IDD5 430 430 420 410 390 300 280 mA

SELF REFRESH CURRENT: Sell Refresh Mode ;

CKE<=0.2V;tCK=tCK(min)

IDD6 4 4 4 4 4 3 3 mA

BURST OPERATING CURRENT 4 bank operation:

Four bank interleaving READs; BL=4;with Auto

Precharge; tRC=tRC(min); tCK=tCK(min); Address and

control inputschang only during Active, READ , or

WRITE command

IDD7 920 890 780 720 710 650 550 mA

Note:

1. Stress greater than those listed under "Absolute Maximum Ratings" may cause permanent

damage of the device.

2. All voltages are referenced to VSS.

3. Power-up sequence is described in previous page.

9

Rev 0.6

May. 2006

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