EMA5(2012) 데이터 시트보기 (PDF) - ROHM Semiconductor

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EMA5
(Rev.:2012)

PNP -100mA -50V Complex Digital Transistors (Bias Resistor Built-in Transistors)

ROHM Semiconductor 

EMA5 / UMA5N / FMA5A

lAbsolute maximum ratings (Ta = 25°C)

<For Tr1 and Tr2 in common>

Parameter

Supply voltage

Input voltage

Output current

Collector current

Power dissipation

EMA5 / UMA5N

FMA5A

Junction temperature

Range of storage temperature

Symbol

VCC

VIN

IO

IC(MAX.)*1

PD *2

Tj

Tstg

Data Sheet

Values

Unit

-50

V

-12 to +5

V

-100

mA

-100

mA

150 (Total) *3

mW

300 (Total) *4

mW

150

°C

-55 to +150

°C

lElectrical characteristics(Ta = 25°C)

<For Tr1 and Tr2 in common>

Parameter

Symbol

Input voltage

VI(off)

VI(on)

Output voltage

VO(on)

Input current

II

Output current

IO(off)

DC current gain

GI

Input resistance

R1

Resistance ratio

R2/R1

Conditions

VCC = -5V, IO = -100mA

VO = -0.3V, IO = -5mA

IO / II = -5mA / -0.25mA

VI = -5V

VCC = -50V, VI = 0V

VO = -5V, IO = -10mA

-

-

Transition frequency

fT *1

VCE = -10V, IE = 5mA,

f = 100MHz

*1 Characteristics of built-in transistor

*2 Each terminal mounted on a reference footprint

*3 120mW per element must not be exceeded.

*4 200mW per element must not be exceeded.

Min.

-

-1.1

-

-

-

80

1.54

17

-

Typ.

-

-

-0.1

-

-

-

2.2

21

250

Max.

-0.5

-

-0.3

-3.6

-0.5

-

2.86

26

-

Unit

V

V

mA

mA

-

kW

-

MHz

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© 2012 ROHM Co., Ltd. All rights reserved.

2/7

2012.06 - Rev.B

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