ESDALC6V1-1M2(2007) 데이터 시트보기 (PDF) - STMicroelectronics
부품명
상세내역
제조사
ESDALC6V1-1M2 Datasheet PDF : 10 Pages
| |||
Characteristics
1
Characteristics
ESDALC6V1-1M2
Table 1. Absolute maximum ratings (Tamb = 25 °C)
Symbol
Parameter
Value
Unit
VPP
ESD discharge - IEC 61000-4-2 contact discharge
PPP
Peak pulse power dissipation (8/20 µs) (1)
Tj initial = Tamb
±30
kV
50
W
IPP
Repetitive peak pulse current (8/20 µs)
6
A
Tj
Junction temperature
125
°C
Tstg
Storage temperature
- 55 to +150
°C
TL
Maximum lead temperature for soldering during 10 s at 5 mm for case
260
°C
TOP
Operating temperature range
- 40 to + 125
°C
1. For a surge greater than the maximum values, the diode will fail in short-circuit
Table 2. Electrical characteristics
Symbol
Parameter
I
VRM
Stand-of voltage
VBR
Breakdown voltage
VCL
Clamping voltage
IRM
Leakage current @ VRM
IPP
Peak pulse current
αT
Voltage temperature coefficient
VF
Forward voltage drop
Order code
VBR @ IR
IRM @ VRM
Vmin Vmax mA nA max V
ESDALC6V1-1M2 6.1 7.2 1
100
3
IF
VCL VBR VRM
VF
V
I RM
IR
Slope= 1/ Rd
I PP
RD
Ω typ
0.5
VF @ 10 mA
αT
V max 10-4/°C max
1
4.5
C@0V
pF typ
22
Figure 2. Peak power dissipation versus
initial junction temperature
Figure 3. Peak pulse power versus
exponential pulse duration
PPP[Tj initial] / PPP [Tj initial=25°C]
1.1
1000 PPP(W)
1.0
0.9
0.8
0.7
0.6
100
0.5
0.4
0.3
0.2
0.1
Tj(°C)
tP(µs)
0.0
10
0
25
50
75
100
125
150
1
10
100
2/10
Share Link: 