ESDALC6V1PX 데이터 시트보기 (PDF) - STMicroelectronics

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ESDALC6V1PX

ASD (Application Specific Devices) Low capacitance TRANSIL™ arrays for ESD protection

STMicroelectronics 

Characteristics

1

Characteristics

ESDALC6V1Px

Table 1.

Symbol

Absolute ratings (Tamb = 25° C)

Parameter

Value Unit

VPP(1) Peak pulse voltage

IEC 61000-4-2 contact discharge

IEC 61000-4-2 air discharge

PPP Peak pulse power (8/20 µs)(1) Tj initial = Tamb

Tj Junction temperature

Tstg Storage temperature range

TL Maximum lead temperature for soldering during 10 s

Top Operating temperature range

1. For a surge greater than the maximum values, the diode will fail in short-circuit.

±8

kV

±15

30

W

150

°C

-55 to +150 °C

260

°C

-40 to +150 °C

Table 2. Electrical characteristics (Tamb = 25° C)

Symbol

Parameter

I

VRM

Stand-off voltage

IF

VBR

Breakdown voltage

VCL

Clamping voltage

IRM

Leakage current

IPP

Peak pulse current

VF

VCL VBR VRM

IRM

V

αT

Voltage temperature coefficient

VF

Forward voltage drop

C

Capacitance

Slope: 1/Rd

IPP

Rd

Dynamic resistance

Part Number

VBR@ IR

min. max.

V

V

mA

ESDALC6V1P3

ESDALC6V1P5 6.1

7.2

1

ESDALC6V1P6

IRM @ VRM

max.

µA

V

0.1

3

Rd

αT

C

typ.

typ. typ.@ 3V

Ω

10-4/°C

pF

1.5

4.5

7.5

2/9

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