EN29F040-45J 데이터 시트보기 (PDF) - Eon Silicon Solution Inc.

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EN29F040-45J

4 Megabit (512K x 8-bit) Flash Memory

Eon Silicon Solution Inc. 

Revisions List

EN29F040

A,B:

Preliminary

C (2001.07.03):

Pg. 13 Logical Inhibit section now says that if CE , W E , and OE are all logical zero

(not recommended usage), it will be considered a write.

VID is everywhere changed to be VID =11.5 ± 0.5V

D (2001.07.05):

“block” changed to “sector”

Deleted Sector Un/Protect flow charts (we have a supplement for that)

VID is everywhere changed to be VID =11.0 ± 0.5V

LACTHUP >= 200mA line removed from first page

Chip erase and Sector Erase command descriptions modified.

DQ7,DQ5,DQ3 status polling descriptions modified.

Table 12 Latchup characteristics modified

4800 Great America Parkway, Suite 202

32

Santa Clara, CA 95054

Rev. D, Issue Date: 2001/07/05

Tel: 408-235-8680

Fax: 408-235-8685

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