FCX555(2005) 데이터 시트보기 (PDF) - Diodes Incorporated.

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FCX555
(Rev.:2005)

180V High voltage PNP switching transistor in SOT89

Diodes Incorporated. 

FCX555

Electrical characteristics

Parameter

Symbol Min. Typ. Max. Unit Conditions

Collector-base breakdown

voltage

BVCBO

-180

V IC = -100µA

Collector-emitter

breakdown voltage

BVCEV -180

V IC = -1µA,

-0.3V < VBE < 1V

Collector-emitter

breakdown voltage

BVCER -180

V IC = -1µA, RBՅ1k⍀

Emitter-base breakdown

voltage

BVEBO

-7 -8.1

V IE= -100µA

Collector-emitter

breakdown voltage

BVCEO -150

V IC =-10mA(*)

Collector cut-off current

ICBO

<1 -20 nA VCB = -144V

-10 µA VCB = -144V, TAMB = 100°C

Emitter cut-off current

IEBO

<1 -20 nA VEB = -6V

Collector emitter saturation VCE(SAT)

voltage

-300 mV IC = -0.1A, IB = -10mA(*)

-400 mV IC = -0.25A, IB = -25mA(*)

Base-emitter saturation

voltage

VBE(SAT)

-1000 mV IC =-250mA, IB =-25mA(*)

Base-emitter turn-on

voltage

VBE(ON)

-950 mV IC =-250mA, VCE =-5V(*)

Static forward current

hFE

100

transfer ratio

100

IC = -10mA, VCE = -5V(*)

300

IC = -100mA, VCE = -5V(*)

Transition frequency

fT

100

MHz Ic = -50mA, VCE = -10V,

f = 100MHZ

Output capacitance

COBO

10

pF VCB 1= -10V, f = 1MHZ(*)

NOTES:

(*) Measured under pulsed conditions. Pulse width Յ300µs; duty cycle Յ2%.

Issue 1 - November 2005

3

© Zetex Semiconductors plc 2005

www.zetex.com

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