FDC365P 데이터 시트보기 (PDF) - Fairchild Semiconductor
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FDC365P Datasheet PDF : 6 Pages
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Typical Characteristics TJ = 25°C unless otherwise noted
20
VGS = -10V
PULSE DURATION = 80µs
16
DUTY CYCLE = 0.5%MAX
VGS = -4.5V
12
VGS = -4V
8
VGS = -3.5V
4
VGS = -3V
0
0
1
2
3
4
5
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics
4.0
PULSE DURATION = 80µs
3.5
VGS = -3V
DUTY CYCLE = 0.5%MAX
3.0
VGS = -3.5V
2.5
VGS = -4V
2.0
1.5
VGS = -4.5V
1.0
0.5
0
4
8
12
-ID, DRAIN CURRENT(A)
VGS = -10V
16
20
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
1.6
ID = - 4.2A
VGS = -10V
1.4
200
ID = -4.2A
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
160
1.2
120
TJ = 125oC
1.0
80
0.8
40
TJ = 25oC
0.6
-75 -50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
Figure 3. Normalized On- Resistance
vs Junction Temperature
20
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
16
VDS = -5V
12
8
TJ = 150oC
4
TJ = 25oC
TJ = -55oC
0
1
2
3
4
5
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
0
2
4
6
8
10
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance vs Gate to
Source Voltage
20
10
VGS = 0V
1
TJ = 150oC
0.1
TJ = 25oC
0.01
TJ = -55oC
0.001
0.0 0.2 0.4 0.6 0.8 1.0 1.2
-VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
©2007 Fairchild Semiconductor Corporation
3
FDC365P Rev.C
www.fairchildsemi.com
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