FDG6303N 데이터 시트보기 (PDF) - Fairchild Semiconductor
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FDG6303N Datasheet PDF : 8 Pages
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Typical Electrical Characteristics (continued)
5
ID = 0.5A
4
VDS = 5V
10V
15V
3
2
1
0
0
0.4
0.8
1.2
1.6
2
Qg , GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
200
70
C iss
30
C oss
10
f = 1 MHz
VGS = 0V
C rss
3
0.1
0.3
1
2
5
10
25
V DS, DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Capacitance Characteristics.
3
1
0.5
RDS(ON) LIMIT
1ms
10ms
100ms
0.2
0.1
VGS = 4.5V
0.05
SINGLE PULSE
1s
10s
DC
RθJA = 415 °C/W
0.02
TA= 25°C
0.01
0.1
1
2
5
10
25 40
VDS , DRAI N-SOURCE VOLTAGE (V)
Figure 9. Maximum Safe Operating Area.
50
SINGLE PULSE
40
R θJA=415°C/W
TA= 25°C
30
20
10
0
0.0001 0.001
0.01
0.1
1
10
200
SINGLE PULSE TIME (SEC)
Figure 10. Single Pulse Maximum Power
Dissipation.
1
0.5 D = 0.5
0.2
0.1
0.05
0.02
0.01
0.005
0.2
0.1
0.05
0.02
0.01
Single Pulse
0.002
0.0001
0.001
0.01
0.1
1
t1, TIME (sec)
R θJA (t) = r(t) * R θJA
R θJA =415 °C/W
P(pk)
t1
t2
TJ - TA = P * R θJA (t)
Duty Cycle, D = t1/ t 2
10
100 200
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in note 1.
Transient thermal response will change depending on the circuit board design.
FDG6303N Rev.E1
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