FDN359BN 데이터 시트보기 (PDF) - Fairchild Semiconductor
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FDN359BN Datasheet PDF : 6 Pages
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January 2006
FDN359BN
N-Channel Logic Level PowerTrenchTM MOSFET
General Description
This N-Channel Logic Level MOSFET is produced
using Fairchild’s Semiconductor’s advanced
PowerTrench process that has been especially tailored
to minimize on-state resistance and yet maintain
superior switching performance.
These devices are well suited for low voltage and
battery powered applications where low in-line power
loss and fast switching are required.
Features
• 2.7 A, 30 V.
RDS(ON)= 0.046 Ω @ VGS = 10 V
RDS(ON)= 0.060 Ω @ VGS = 4.5 V
• Very fast switching speed.
• Low gate charge (5nC typical)
• High performance version of industry standard
SOT-23 package. Identical pin out to SOT-23 with 30%
higher power handling capability.
D
D
S
SuperSOTTM-3
G
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
VGSS
ID
Parameter
Drain-Source Voltage
Gate-Source Voltage
Maximum Drain Current – Continuous
(Note 1a)
– Pulsed
PD
Maximum Power Dissipation
(Note 1a)
(Note 1b)
TJ, TSTG
Operating and Storage Temperature Range
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
RθJC
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
359B
FDN359BN
7’’
G
S
Ratings
30
±20
2.7
15
0.5
0.46
−55 to +150
250
75
Tape width
8mm
Units
V
V
A
W
°C
°C/W
°C/W
Quantity
3000 units
©2006 Fairchild Semiconductor Corporation
FDN359BN Rev A(W)
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