Switching Characteristics (VGS = 10V)
tON
Turn-On Time
td(ON)
Turn-On Delay Time
tr
td(OFF)
Rise Time
Turn-Off Delay Time
tf
Fall Time
tOFF
Turn-Off Time
VDD = 30V, ID = 7.5A
VGS = 10V, RGS = 11Ω
-
-
33
ns
-
9
-
ns
-
13
-
ns
-
67
-
ns
-
17
-
ns
-
-
126
ns
Drain-Source Diode Characteristics
VSD
Source to Drain Diode Voltage
trr
Reverse Recovery Time
QRR
Reverse Recovered Charge
ISD = 7.5A
-
ISD = 2.1A
-
ISD = 7.5A, dISD/dt=100A/µs
-
ISD = 7.5A, dISD/dt=100A/µs
-
-
1.25
V
-
1.0
V
-
33
ns
-
29
nC
Notes:
1: Starting TJ = 25°C, L = 1mH, IAS = 13.7A, VDD = 60V, VGS = 10V.
2: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the
3:
drain
RθJA
ipsinmse. aRsuθJreCdiswgituha1ra.0ntiene2dcobpypdeersoignnFwRh-4ilebRoaθJrdA.
is
determined
by
the
user’s
board
design.
FDS5682 Rev. A
3
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