FDS6375 데이터 시트보기 (PDF) - Fairchild Semiconductor

부품명

상세내역

제조사

FDS6375

P-Channel 2.5V Specified PowerTrench® MOSFET

Fairchild Semiconductor 

September 2001

FDS6375

P-Channel 2.5V Specified PowerTrench® MOSFET

General Description

This P-Channel 2.5V specified MOSFET is a rugged

gate version of Fairchild Semiconductor’s advanced

PowerTrench process. It has been optimized for power

management applications with a wide range of gate

drive voltage (2.5V – 8V).

Applications

• Power management

• Load switch

• Battery protection

Features

• –8 A, –20 V. RDS(ON) = 24 mΩ @ VGS = –4.5 V

RDS(ON) = 32 mΩ @ VGS = –2.5 V

• Low gate charge (26 nC typical)

• High performance trench technology for extremely

low RDS(ON)

• High current and power handling capability

DD

DD

DD

DD

SO-8

Pin 1SO-8 SS SS SS GG

Absolute Maximum Ratings TA=25oC unless otherwise noted

Symbol

VDSS

V GSS

ID

Parameter

Drain-Source Voltage

Gate-Source Voltage

Drain Current – Continuous

– Pulsed

(Note 1a)

PD

Power Dissipation for Single Operation

(Note 1a)

(Note 1b)

(Note 1c)

TJ, TSTG

Operating and Storage Junction Temperature Range

Thermal Characteristics

RθJA

Thermal Resistance, Junction-to-Ambient

RθJA

Thermal Resistance, Junction-to-Ambient

RθJ C

Thermal Resistance, Junction-to-Case

(Note 1a)

(Note 1c)

(Note 1)

Package Marking and Ordering Information

Device Marking

Device

Reel Size

FDS6375

FDS6375

13’’

5

4

6

3

7

2

8

1

Ratings

–20

±8

–8

–50

2.5

1.2

1.0

–55 to +175

50

125

25

Tape width

12mm

Units

V

V

A

W

°C

°C/W

°C/W

°C/W

Quantity

2500 units

©2001 Fairchild Semiconductor Corporation

FDS6375 Rev E(W)

Share Link: