FDS6670ASNL 데이터 시트보기 (PDF) - Fairchild Semiconductor

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FDS6670ASNL

30V N-Channel PowerTrench® SyncFET™

Fairchild Semiconductor 

Electrical Characteristics

Symbol

Parameter

TA = 25°C unless otherwise noted

Test Conditions

Min Typ Max Units

Drain–Source Diode Characteristics and Maximum Ratings

VSD

Drain–Source Diode Forward

VGS = 0 V, IS = 3.5 A (Note 2)

Voltage

VGS = 0 V, IS = 7 A

(Note 2)

trr

Diode Reverse Recovery Time

IF = 13.5A,

Qrr

Diode Reverse Recovery Charge diF/dt = 300 A/µs

(Note 3)

0.5 0.7

V

0.6

20

nS

15

nC

Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder

mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.

a) 50°C/W when

mounted on a 1 in2

pad of 2 oz copper

b) 105°C/W when

mounted on a .04 in2

pad of 2 oz copper

c) 125°C/W when mounted on a

minimum pad.

Scale 1 : 1 on letter size paper

2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%

3. See “SyncFET Schottky body diode characteristics” below.

4. FDS6670AS_NL is a lead free product. The FDS6670AS_NL marking will appear on the reel label.

FDS6670AS Rev A (X)

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