FDS6675A 데이터 시트보기 (PDF) - Fairchild Semiconductor
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FDS6675A Datasheet PDF : 5 Pages
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Typical Characteristics
5
ID = 8A
4
3
VDS = 5V
10V
15V
2
1
0
0
5
10
15
20
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
100
10
RDS(ON) LIMIT
1
100µs
1ms
10ms
100ms
1s
10s
DC
VGS = 4.5V
0.1
SINGLE PULSE
RθJA = 135oC/W
TA = 25oC
0.01
0.01
0.1
1
10
100
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 9. Maximum Safe Operating Area.
2500
2000
CISS
1500
f = 1 MHz
VGS = 0 V
1000
500
COSS
CRSS
0
0
5
10
15
20
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Capacitance Characteristics.
50
40
30
20
10
0
0.01
SINGLE PULSE
RθJA = 135°C/W
TA = 25°C
0.1
1
10
100
t1, TIME (sec)
Figure 10. Single Pulse Maximum
Power Dissipation.
1
0.1
0.01
D = 0.5
0.2
0.1
0.05
0.02
0.01
0.001
0.0001
SINGLE PULSE
0.001
0.01
0.1
1
t1, TIME (sec)
RθJA(t) = r(t) * RθJA
RθJA = 135oC/W
P(pk)
t1
t2
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
10
100
1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
FDS6894A Rev C (W)
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