FDS7764S 데이터 시트보기 (PDF) - Fairchild Semiconductor
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FDS7764S Datasheet PDF : 7 Pages
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Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
Drain–Source Breakdown Voltage
∆BVDSS
∆TJ
IDSS
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
IGSSF
Gate–Body Leakage, Forward
IGSSR
Gate–Body Leakage, Reverse
VGS = 0 V, ID = 1 mA
ID = 10 mA, Referenced to 25°C
VDS = 24 V, VGS = 0 V
VGS = 16 V, VDS = 0 V
VGS = –16 V , VDS = 0 V
On Characteristics (Note 2)
VGS(th)
Gate Threshold Voltage
∆VGS(th)
∆TJ
RDS(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
gFS
Forward Transconductance
VDS = VGS, ID = 1 mA
ID = 10 mA, Referenced to 25°C
VGS = 10 V,
ID = 13.5 A
VGS = 4.5 V,
ID = 12 A
VGS = 10 V, ID=13.5A, TJ = 125°C
VDS = 10 V,
ID = 13.5 A
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
RG
Gate Resistance
VDS = 15 V, V GS = 0 V,
f = 1.0 MHz
VGS = 15 mV, f = 1.0 MHz
Switching Characteristics
td(on)
Turn–On Delay Time
tr
Turn–On Rise Time
td(off)
Turn–Off Delay Time
tf
Turn–Off Fall Time
Qg
Total Gate Charge
Qgs
Gate–Source Charge
Qgd
Gate–Drain Charge
(Note 2)
VDD = 15 V, ID = 1 A,
VGS = 10 V, RGEN = 6 Ω
VDS = 15 V, ID = 13.5 A,
VGS = 5 V
30
V
23
mV/°C
500 µA
100 nA
–100 nA
0.8 1.4
–2
2
V
mV/°C
6 7.5 mΩ
7
9
8 10
72
S
2800
pF
530
pF
195
pF
1.4
Ω
9 18
ns
7 14
ns
46 74
ns
16 29
ns
25 35
nC
6
nC
6
nC
FDS7764S Rev D (W)
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