FDS8447 데이터 시트보기 (PDF) - Fairchild Semiconductor
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FDS8447 Datasheet PDF : 6 Pages
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Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
∆BVDSS
∆TJ
IDSS
IGSS
Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V
Breakdown Voltage Temperature
Coefficient
ID = 250µA, referenced to 25°C
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
VDS = 32V, VGS = 0V
TJ = 55°C
VGS = ±20V, VDS = 0V
40
V
34
mV/°C
1
µA
10
µA
±100 nA
On Characteristics (Note 2)
VGS(th)
Gate to Source Threshold Voltage VGS = VDS, ID = 250µA
1
∆VGS(th)
∆TJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID = 250µA, referenced to 25°C
VGS = 10V, ID = 12.8A
rDS(on)
Drain to Source On Resistance
VGS = 4.5V, ID = 11.4A
VGS = 10V, ID = 12.8A,TJ = 125°C
gFS
Forward Transconductance
VDS = 10V, ID = 12.8A
1.8
3
V
-5
mV/°C
9
10.5
10 12.3 mΩ
13
15
75.3
S
Dynamic Characteristics
Ciss
Coss
Crss
Rg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VDS = 20V, VGS = 0V,
f = 1MHz
f = 1MHz
2000 2600 pF
250 350
pF
150 250
pF
1.3
Ω
Switching Characteristics
td(on)
tr
td(off)
tf
Qg
Qg
Qgs
Qgd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge at VGS = 10V
Total Gate Charge at VGS = 5V
Gate to Source Gate Charge
Gate to Drain “Miller”Charge
VDD = 20V, ID = 12.8A
VGS = 10V, RGEN = 4.5Ω
VDS = 20V, ID = 12.8A,
11
20
ns
14
25
ns
27
42
ns
7
14
ns
35
49
nC
19
27
nC
6
nC
7
nC
Drain-Source Diode Characteristics and Maximum Ratings
VSD
Source to Drain Diode Forward Voltage VGS = 0V, IS = 12.8A (note 2)
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IF = 12.8A, diF/dt = 100A/µs
0.84 1.2
V
19
29
ns
9.5
19
nC
Notes:
1: RθJA is the sum of the junction-to-case and case-to- ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the
drain pins. RθJC is guaranteed by design while RθJA is determined by the user’s board design.
a) 50°C/W when
mounted on a 1in2
pad of 2 oz copper
b) 125°C/W when mounted on a
minimum pad .
Scale 1:1 on letter size paper
2: Pulse Test: Pulse Width < 300 us, Duty Cycle < 2.0%.
3: Starting TJ = 25°C, L = 3mH, IAS = 10A, VDD = 40V, VGS = 10V.
FDS8447 Rev.B
2
www.fairchildsemi.com
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