FDS8935 데이터 시트보기 (PDF) - Fairchild Semiconductor
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FDS8935 Datasheet PDF : 6 Pages
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Typical Characteristics TJ = 25 °C unless otherwise noted
10
VGS = -10 V
8
VGS = -5 V
VGS = -4 V
6
VGS = -3.5 V
4
VGS = -3 V
2
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
0
0
1
2
3
4
5
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics
3.0
VGS = -3 V
2.5
VGS = -3.5 V
2.0
1.5
1.0
VGS = -4 V VGS = -5 V
0.5
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
0.0
0
2
4
6
-ID, DRAIN CURRENT (A)
VGS = -10 V
8
10
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
2.0
ID = - 2.1 A
1.8 VGS = -10 V
1.6
1.4
1.2
1.0
0.8
0.6
0.4
-75 -50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
Figure 3. Normalized On- Resistance
vs Junction Temperature
10
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
8
VDS = -5 V
6
4
TJ = 150 oC
TJ = 25 oC
2
TJ = -55 oC
0
1
2
3
4
5
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
800
ID = -2.1 A
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
600
400
TJ = 150 oC
200
TJ = 25 oC
0
2
4
6
8
10
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance vs Gate to
Source Voltage
20
10 VGS = 0 V
1
TJ = 150 oC
0.1
TJ = 25 oC
0.01
TJ = -55 oC
0.001
0.0 0.2 0.4 0.6 0.8 1.0 1.2
-VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
©2010 Fairchild Semiconductor Corporation
3
FDS8935 Rev.C
www.fairchildsemi.com
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