FDS8949_F085 데이터 시트보기 (PDF) - Fairchild Semiconductor
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FDS8949_F085 Datasheet PDF : 6 Pages
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Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
∆BVDSS
∆TJ
IDSS
IGSS
Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V
Breakdown Voltage Temperature
Coefficient
ID = 250µA, referenced to 25°C
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
VDS = 32V, VGS = 0V
TJ = 55°C
VGS = ±20V,VDS = 0V
40
V
33
mV/°C
1
µA
10
µA
±100 nA
On Characteristics (Note 2)
VGS(th)
∆VGS(th)
∆TJ
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
rDS(on)
Drain to Source On Resistance
gFS
Forward Transconductance
VGS = VDS, ID = 250µA
ID = 250µA, referenced to 25°C
VGS = 10V, ID = 6A
VGS = 4.5V, ID = 4.5A
VGS = 10V, ID = 6A,TJ = 125°C
VDS = 10V,ID = 6A
1
1.9
3
V
-4.6
mV/°C
21
29
26
36
mΩ
29
43
22
S
Dynamic Characteristics
Ciss
Coss
Crss
Rg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VDS = 20V, VGS = 0V,
f = 1MHz
f = 1MHz
715 955
pF
105 140
pF
60
90
pF
1.1
Ω
Switching Characteristics
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller”Charge
VDD = 20V, ID = 1A
VGS = 10V, RGEN = 6Ω
VDS = 20V, ID = 6A,VGS = 5V
9
18
ns
5
10
ns
23
37
ns
3
6
ns
7.7
11
nC
2.4
nC
2.8
nC
Drain-Source Diode Characteristics and Maximum Ratings
VSD
Source to Drain Diode Forward Voltage VGS = 0V, IS = 6A (note 2)
trr
Qrr
Reverse Recovery Time (note 3)
Reverse Recovery Charge
IF = 6A, diF/dt = 100A/µs
0.8
1.2
V
17
26
ns
7
11
nC
Notes:
1: RθJA is the sum of the junction-to-case and case-to- ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the
drain pins. RθJC is guaranteed by design while RθJA is determined by the user’s board design.
a) 81°C/W when
mounted on a 1in2
pad of 2 oz copper
b) 135°C/W when mounted on a
minimum pad .
Scale 1:1 on letter size paper
2: Pulse Test: Pulse Width < 300 us, Duty Cycle < 2.0%.
3: Starting TJ = 25°C, L = 1mH, IAS = 7.3A, VDD = 40V, VGS = 10V.
FDS8949_F085 Rev. A
2
www.fairchildsemi.com
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