FDS6299S(2005) 데이터 시트보기 (PDF) - Fairchild Semiconductor
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FDS6299S Datasheet PDF : 6 Pages
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Typical Characteristics (continued)
SyncFET Schottky Body Diode
Characteristics
Fairchild’s SyncFET process embeds a Schottky diode in
parallel with PowerTrench MOSFET. This diode exhibits
similar characteristics to a discrete external Schottky
diode in parallel with a MOSFET. Figure 12 shows the
reverse recovery characteristic of the FDS6299S.
Schottky barrier diodes exhibit significant leakage at high
temperature and high reverse voltage. This will increase
the power in the device.
0.1
0.01
TA = 125oC
0.001
TA = 100oC
TIME : 12.5ns/div
Figure 12. FDS6299S SyncFET body
diode reverse recovery characteristic.
0.0001
0.00001
0
TA = 25oC
5
10
15
20
25
30
VDS, REVERSE VOLTAGE (V)
Figure 13. SyncFET body diode reverse
leakage versus drain-source voltage and
temperature.
FDS6299S Rev C (W)
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