FDS4897C 데이터 시트보기 (PDF) - Fairchild Semiconductor
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FDS4897C Datasheet PDF : 9 Pages
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Typical Characteristics: Q2 (P-Channel)
30
VGS = -10V
25
20
-6.0V
-4.5V
-4.0V
15
-3.5V
10
-3.0V
5
0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 13. On-Region Characteristics.
2.6
2.4
2.2
VGS = - 3.5V
2
1.8
-4.0V
1.6
-4.5V
1.4
-6.0V
1.2
-10V
1
0.8
0
5
10
15
20
25
30
-ID, DRAIN CURRENT (A)
Figure 14. On-Resistance Variation with
Drain Current and Gate Voltage.
1.6
1.5
ID = -4.4A
VGS = - 10V
1.4
1.3
1.2
1.1
1
0.9
0.8
0.7
0.6
-50 -25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
Figure 15. On-Resistance Variation with
Temperature.
0.14
ID = -2.2A
0.12
0.1
0.08
TA = 125oC
0.06
0.04
TA = 25oC
0.02
2
4
6
8
10
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 16. On-Resistance Variation with
Gate-to-Source Voltage.
25
VDS = -10V
20
15
TA = -55oC
25oC
125oC
10
5
0
1.5
2
2.5
3
3.5
4
4.5
-VGS, GATE TO SOURCE VOLTAGE (V)
100
VGS = 0V
10
1
0.1
0.01
TA = 125oC
25oC
-55oC
0.001
0.0001
0
0.2
0.4
0.6
0.8
1
1.2
-VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 17. Transfer Characteristics.
Figure 18. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDS4897C Rev C(W)
www.fairchildsemi.com
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