FGPF70N30 데이터 시트보기 (PDF) - Fairchild Semiconductor
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FGPF70N30 Datasheet PDF : 7 Pages
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Package Marking and Ordering Information
Device Marking
FGPF70N30
Device
FGPF70N30TU
Package
TO-220F
Packaging
Type
Rail / Tube
Electrical Characteristics TC = 25oC unless otherwise noted
Symbol
Parameter
Test Conditions
Off Characteristics
BVCES
Collector-Emitter Breakdown Voltage
∆BVCES/
∆TJ
ICES
IGES
Temperature Coefficient of Breakdown
Voltage
Collector Cut-Off Current
G-E Leakage Current
VGE = 0V, IC = 250uA
VGE = 0V, IC = 250uA
VCE = VCES, VGE = 0V
VGE = VGES, VCE = 0V
On Characteristics
VGE(th)
G-E Threshold Voltage
Collector to Emitter
VCE(sat) Saturation Voltage
IC = 250uA, VCE = VGE
IC =20A, VGE = 15V
IC =40A, VGE = 15V
IC = 70A, VGE = 15V
TC = 25oC
IC = 70A, VGE = 15V
TC = 125oC
Dynamic Characteristics
Cies
Coes
Cres
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VCE = 30V, VGE = 0V
f = 1MHz
Switching Characteristics
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
Qg
Qge
Qgc
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
VCC = 200 V, IC = 40A
RG = 15Ω, VGE = 15V
Resistive Load, TC = 25oC
VCC = 200 V, IC = 40A
RG = 15Ω, VGE = 15V
Resistive Load, TC = 125oC
VCE = 200 V, IC = 40A
VGE = 15V
Qty per Tube
50ea
Max Qty
per Box
-
Min. Typ. Max. Units
300
--
--
V
V/oC
--
0.6
--
--
--
100
uA
--
--
± 250
nA
2.5
4.0
5
V
--
1.2
1.5
V
--
1.4
--
V
V
--
1.8
--
V
--
1.9
--
--
1300
--
pF
--
180
--
pF
--
60
--
pF
--
17
--
ns
--
83
--
ns
--
103
--
ns
--
160
300
ns
--
18
--
ns
--
83
--
ns
--
104
--
ns
--
250
--
ns
--
71
--
nC
--
10
--
nC
--
34
--
nC
2
www.fairchildsemi.com
FGPF70N30 Rev. A
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