FS5AS-06
Electrical Characteristics
Parameter
Drain-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
Reverse recovery time
(Tch = 25°C)
Symbol
Min
Typ
Max Unit
Test Conditions
V(BR)DSS
60
—
—
V
ID = 1 mA, VGS = 0 V
IGSS
—
—
±0.1
µA VGS = ±20 V, VDS = 0 V
IDSS
—
—
0.1
mA VDS = 60 V, VGS = 0 V
VGS(th)
2.0
3.0
4.0
V
ID = 1 mA, VDS = 10 V
rDS(ON)
—
0.12 0.16
Ω
ID = 2 A, VGS = 10 V
VDS(ON)
—
0.24 0.32
V
ID = 2 A, VGS = 10 V
| yfs |
—
4.0
—
S
ID = 2 A, VDS = 5 V
Ciss
—
280
—
pF VDS = 10 V, VGS = 0 V,
Coss
—
120
—
pF f = 1MHz
Crss
—
35
—
pF
td(on)
—
15
—
ns VDD = 30 V, ID = 2 A,
tr
td(off)
—
8
—
ns VGS = 10 V,
—
18
—
ns
RGEN = RGS = 50 Ω
tf
—
9
—
ns
VSD
—
1.0
1.5
V
IS = 2 A, VGS = 0 V
Rth(ch-c)
—
—
6.25 °C/W Channel to case
trr
—
45
—
ns IS = 5 A, dis/dt = –100 A/µs
Rev.2.00 Aug 07, 2006 page 2 of 6