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DM0465RS 데이터 시트보기 (PDF) - Fairchild Semiconductor

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DM0465RS
Fairchild
Fairchild Semiconductor Fairchild
DM0465RS Datasheet PDF : 19 Pages
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Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. TA = 25°C, unless otherwise specified.
Symbol
Parameter
Value
Unit
BVDSS
VSTR
IDM
ID
EAS
VCC
VFB
PD(Watt H/S)
TJ
TA
TSTG
ESD
Drain Source Breakdown Voltage
VSTR Maximum Voltage
Drain Current Pulsed(6)
Continuous Drain Current(7)
Single Pulsed Avalanche Energy(8)
TC=25°C
TC=25°C
TC=100°C
Supply Voltage
Input Voltage Range
Total Power Dissipation (Tc=25°C)
Operating Junction Temperature
Operating Ambient Temperature
Storage Temperature
ESD Capability, Human Body Model, JESD22-A114
(All pins excepts for VSTR and VFB)
ESD Capability, Charged Device Model,
JESD22-C101
650
650
9.6
2.2
1.4
120
20
-0.3 to 12
45
Internally limited
-25 to +85
-55 to +150
2.0
(GND-VSTR/VFB=1.5kV)
1.0
V
V
ADC
ARMS
ARMS
mJ
V
V
W
°C
°C
°C
kV
kV
Notes:
6. Repetitive rating: pulse width limited by maximum junction temperature.
7. This value is RMS current rating which should not be confused by the switching current.
8. L=14mH, starting TJ=25°C.
Thermal Impedance
TA=25°C, unless otherwise specified.
Symbol
θJA(9)
θJC(10)
Parameter
Junction-to-Ambient Thermal
Junction-to-Case Thermal
Notes:
9. Free standing with no heat-sink under natural convection.
10. Infinite cooling condition - Refer to the SEMI G30-88.
Value
50
2.78
Unit
°C/W
°C/W
© 2008 Fairchild Semiconductor Corporation
FSDM0465RS Rev. 1.0.1
5
www.fairchildsemi.com

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