2. Transformer
FSQ0765R Rev.00 EER3016
1
10 N12V/2
2
Np/2
Np/2 3
Na 4
5
9 N12V/2
8
7 N5V
6
FSQ0765R Rev.00
Lp/2
(0.4φ)
L12V/2
(TIW 0.5φ,
2parallel)
LVcc(0.2φ)
L5V
(TIW 0.5φ,
2parallel)
L12V/2
(TIW 0.5φ,
2parallel)
Lp/2
(0.4φ)
1
2
99
4
77
88
5
66
10 10
2
3
Bottom of bobbin
99
Figure 39. Transformer Schematic Diagram of FSQ0565R
TAPE 4T
TAPE 1T
TAPE 2T
TAPE 2T
TAPE 2T
TAPE 2T
TAPE 2T
TAPE 1T
3. Winding Specification
Position
Top
Bottom
No
Pin (s→f)
Wire
Insulation: Polyester Tape t = 0.025mm, 4 Layers
Np/2
2→1
0.4φ × 1
Insulation: Polyester Tape t = 0.025mm, 2 Layers
N12V/2
9→8
0.5φ × 2(TIW)
Insulation: Polyester Tape t = 0.025mm, 2 Layers
Na
4→5
0.15φ × 1
Insulation: Polyester Tape t = 0.025mm, 2 Layers
N5V
7→6
0.5φ × 2(TIW)
Insulation: Polyester Tape t = 0.025mm, 2 Layers
N12V/2
10 → 9
0.5φ × 2(TIW)
Insulation: Polyester Tape t = 0.025mm, 2 Layers
Np/2
3→2
0.4φ × 1
Turns
Winding Method
20 2-Layer Solenoid Winding
4
Center Solenoid Winding
10 Center Solenoid Winding
4
Center Solenoid Winding
5
Center Solenoid Winding
32 2-Layer Solenoid Winding
4. Electrical Characteristics
Inductance
Leakage
Pin
Specification
Remarks
1-3
360µH ± 10%
100kHz, 1V
1-3
15µH Maximum
Short all other pins
5. Core & Bobbin
Core: EER3016 (Ae=109.7mm2)
Bobbin: EER3016
© 2007 Fairchild Semiconductor Corporation
FSQ0565R, FSQ0765R Rev. 1.0.0
19
www.fairchildsemi.com