AB28F400BX-T90 데이터 시트보기 (PDF) - Intel

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AB28F400BX-T90

4-MBIT (256K x16, 512K x8) BOOT BLOCK FLASH MEMORY FAMILY

Intel 

A28F400BX-T B

DC CHARACTERISTICS (Continued)

Symbol

Parameter

Notes Min Typ Max Unit

Test Condition

ICCS VCC Standby Current

13

ICCD

ICCR

VCC Deep Powerdown Current 1

VCC Read Current for

15

28F400BX Byte-Wide

6

and Word-Wide Mode

15

mA VCC e VCC Max

CE e RP e VIH

130

mA VCC e VCC Max

CE e RP e VCC g0 2V

28F200BX

BYTE e VCC g0 2V or GND

80

mA RP e GND g0 2V

60

mA VCC e VCC Max CE e GND

f e 10 MHz IOUT e 0 mA

CMOS Inputs

65

mA VCC e VCC Max CE e VIL

f e 10 MHz IOUT e 0 mA

TTL Inputs

ICCW VCC Word Byte Write Current 1 4

ICCE VCC Block Erase Current

14

ICCES VCC Erase Suspend Current 1 2

IPPS

IPPD

IPPR

IPPW

VPP Standby Current

1

VPP Deep PowerDown Current 1

VPP Read Current

1

VPP Word Write Current

14

65 mA Word Write in Progress

30 mA Block Erase in Progress

5

10 mA Block Erase Suspended

CE e VIH

g15 mA VPP s VCC

5 0 mA RP e GND g0 2V

200

mA VPP l VCC

40

mA VPP e VPPH

Word Write in Progress

IPPW VPP Byte Write Current

14

30

mA VPP e VPPH

Byte Write in Progress

IPPE VPP Block Erase Current

14

30

mA VPP e VPPH

Block Erase in Progress

IPPES VPP Erase Suspend Current

1

200

mA VPP e VPPH

Block Erase Suspended

IRP

RP Current

14

IID

A9 Intelligent Identifier Current 1 4

VID

A9 Intelligent Identifier Voltage

11 5

VIL

Input Low Voltage

b0 5

VIH

Input High Voltage

20

VOL Output Low Voltage

500

500

13 0

mA RP e VHH

mA A9 e VID

V

08

V

VCC a 0 5 V

0 45

V VCC e VCC Min

IOL e 5 8 mA

24

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