AB28F400BX-T90 데이터 시트보기 (PDF) - Intel
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AB28F400BX-T90 Datasheet PDF : 34 Pages
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A28F400BX-T B
AC CHARACTERISTICS CE -CONTROLLED WRITE OPERATIONS(1 9)
Symbol
Versions
Parameter
A28F400BX-90(10)
Unit
Notes
Min
Max
tAVAV
tWC Write Cycle Time
90
ns
tPHEL
tPS
RP High Recovery to CE Going Low
210
ns
tWLEL
tWS WE Setup to CE Going Low
0
ns
tPHHEH tPHS RP VHH Setup to CE Going High
68
100
ns
tVPEH
tVPS VPP Setup to CE Going High
58
100
ns
tAVEH
tAS
Address Setup to CE Going High
3
60
ns
tDVEH tDS Data Setup to CE Going High
4
60
ns
tELEH
tCP
CE Pulse Width
60
ns
tEHDX
tDH
Data Hold from CE High
4
0
ns
tEHAX
tAH
Address Hold from CE High
3
10
ns
tEHWH tWH WE Hold from CE High
10
ns
tEHEL
tCPH CE Pulse Width High
30
ns
tEHQV1
Duration of Word Byte Programming
25
7
ms
Operation
tEHQV2
Duration of Erase Operation (Boot)
256
04
tEHQV3
Duration of Erase Operation (Parameter) 2 5
04
tEHQV4
Duration of Erase Operation (Main)
25
07
tQWL
tVPH VPP Hold from Valid SRD
58
0
tQVPH
tPHH RP VHH Hold from Valid SRD
68
0
tPHBR
Boot-Block Relock Delay
7
s
s
s
ns
ns
100
ns
NOTES
1 Chip-Enable Controlled Writes Write operations are driven by the valid combination of CE and WE in systems where
CE defines the write pulse-width (within a longer WE timing waveform) all set-up hold and inactive WE times should
be measured relative to the CE waveform
2 3 4 5 6 7 8 Refer to AC Characteristics for WE -Controlled Write Operations
9 Read timing characteristics during write and erase operations are the same as during read-only operations Refer to AC
Characteristics during Read Mode
10 See Standard Test Configuration
32
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