28F004BX-B 데이터 시트보기 (PDF) - Intel
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28F004BX-B Datasheet PDF : 50 Pages
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28F400BX-T B 28F004BX-T B
EXTENDED TEMPERATURE OPERATION
AC CHARACTERISTICS WE Controlled Write Operations(1) (Continued)
Symbol
Versions(4)
Parameter
Notes
T28F400BX-80(9)
T28F004BX-80(9)
Min
Max
Unit
tWHQV3
Duration of Erase Operation
25
04
s
(Parameter)
tWHQV4
Duration of Erase Operation (Main)
25
07
tQVVL
tVPH VPP Hold from Valid SRD
58
0
tQVPH
tPHH RP VHH Hold from Valid SRD
68
0
tPHBR
Boot-Block Relock Delay
78
tIR
Input Rise Time
tIF
Input Fall Time
s
ns
ns
100
ns
10
ns
10
ns
NOTES
1 Read timing characteristics during write and erase operations are the same as during read-only operations Refer to AC
characteristics during Read Mode
2 The on-chip WSM completely automates program erase operations program erase algorithms are now controlled inter-
nally which includes verify and margining operations
3 Refer to command definition table for valid AIN
4 Refer to command definition table for valid DIN
5 Program Erase durations are measured to valid SRD data (successful operation SR 7 e 1)
6 For Boot Block Program Erase RP should be held at VHH until operation completes successfully
7 Time tPHBR is required for successful relocking of the Boot Block
8 Sampled but not 100% tested
9 See Standard Test Configuration
EXTENDED TEMPERATURE OPERATION
BLOCK ERASE AND WORD BYTE WRITE PERFORMANCE
VPP e 12 0V g5%
Parameter
T28F400BX-80
Notes
T28F004BX-80
Unit
Min
Typ(1)
Max
Boot Parameter
2
Block Erase Time
15
10 5
s
Main Block
2
Erase Time
30
18
s
Main Block Byte
2
Program Time
14
50
s
Main Block Word
2
Program Time
07
25
s
NOTES
1 25 C
2 Excludes System-Level Overhead
44
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