G3400 데이터 시트보기 (PDF) - GTM CORPORATION
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G3400 Datasheet PDF : 4 Pages
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Pb Free Plating Product
ISSUED DATE :2006/08/14
REVISED DATE :
G3400
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS
RDS(ON)
ID
30V
28m
5.8A
Description
The G3400 uses advanced trench technology to provide excellent on-resistance extremely efficient and
cost-effectiveness device.
The G3400 is universally used for all commercial-industrial applications.
Features
* Lower Gate Charge
*Small Package Outline
*RoHS Compliant
Package Dimensions
TPU.34)QBDLBHF*
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1,2
Total Power Dissipation
Linear Derating Factor
Operating Junction and Storage Temperature Range
Symbol
VDS
VGS
ID @TA=25к
ID @TA=70к
IDM
PD @TA=25к
Tj, Tstg
Thermal Data
Parameter
Thermal Resistance Junction-ambient3 Max.
Symbol
Rthj-a
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.70 3.10
2.40 2.80
1.40 1.60
0.35 0.50
0
0.10
0.45 0.55
REF.
G
H
K
J
L
M
Ratings
30
±12
5.8
4.9
30
1.38
0.01
-55 ~ +150
Value
90
Millimeter
Min.
Max.
1.90 REF.
1.00
1.30
0.10
0.20
0.40
-
0.85
1.15
0°
10°
Unit
V
V
A
A
A
W
W/к
к
Unit
к/W
G3400
Page: 1/4
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