GT15J121 데이터 시트보기 (PDF) - Toshiba

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GT15J121

TOSHIBA Insulated Gate Bipolar Transistor Silicon N Chanenel IGBT

Toshiba 

TOSHIBA

Preliminary

GT15J121

Electrical Characteristics(Ta=25℃)

Characteristic

Gate leakage current

Collector cut-off current

Gate-emitter cut-off voltage

Collector-emitter saturation volatage

Input capacitance

Turn-on delay time

Rise Time

Turn-on Time

Switching time

Turn-off delay time

Fall Time

Turn-off Time

Turn-on switching loss

Switching loss

Turn-off switching loss

Thermal resistance

Symbol

IGES

ICES

VGE(OFF)

VCE(sat)

Cies

td(on)

tr

ton

td(off)

tf

toff

Eon

Eoff

Rth(j-c)

Test Condition

VGE=±20V,VCE=0

VCE=600V,VGE=0

IC=1.5mA,VCE=5V

IC=15A,VGE=15V

VCE=10V,VGE=0,f=1MHz

Inductive Load

VCC=300V,IC=15A

VGG=+15V,RG=27Ω

(Note 1)

(Note 2)

―

Min Typ. Max Unit

- - ±500 nA

- - 1.0 mA

3.0 - 6.0 V

- 2.7 3.5 V

- 1300 - pF

- 0.04 -

- 0.03 -

- 0.12 - μs

- 0.10 -

- 0.08 0.15

- 0.20 -

- 0.23 - mJ

- 0.18 -

- - 3.57 ℃/W

GT15J321

2001-7- 2/2

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