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GT15J311 데이터 시트보기 (PDF) - Toshiba

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GT15J311 Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
GT15J311,GT15J311(SM)
Electrical Characteristics (Ta = 25°C)
CHARACTERISTIC
SYMBOL
TEST CONDITION
Gate Leakage Current
Collector CutOff Current
Gate-Emitter Cut-Off Voltage
CollectorEmitter Saturation Voltage
Input Capacitance
Rise Time
Switching Time
TurnOn Time
Fall Time
TurnOff Time
Peak Forward Voltage
Reverse Recovery Time
Thermal Resistance (IGBT)
Thermal Resistance (Diode)
IGES
ICES
VGE (OFF)
VCE (sat)
Cies
tr
ton
tf
toff
VF
trr
Rth (jc)
Rth (jc)
VGE=±20V, VCE = 0
VCE = 600V, VGE = 0
IC = 1.5mA, VCE = 5V
IC = 15A, VGE = 15V
VCE = 20V, VGE = 0, f = 1MHz
Inductive Load
VCC = 300V, IC = 15A
VGG = ±15V, RG = 75Ω
(Note 1)
IF = 15A, VGE = 0
IF = 15A, di / dt = 100A / μs
Note 1: Switching time measurement circuit and input / output waveforms
MIN TYP. MAX UNIT
±500 nA
1.0 mA
5.0
8.0
V
2.1 2.7
V
950
pF
0.12
0.40
μs
0.15 0.30
0.50
2.0
V
200
ns
1.79 °C / W
3.45 °C / W
Switching loss measurement waveforms
2
2006-10-31

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