H5PS1G43EFR 데이터 시트보기 (PDF) - Hynix Semiconductor
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H5PS1G43EFR Datasheet PDF : 44 Pages
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H5PS1G43EFR
H5PS1G83EFR
H5PS1G63EFR
4. Electrical Characteristics & AC Timing Specification
(TOPER; VDDQ = 1.8 +/- 0.1V; VDD = 1.8 +/- 0.1V)
Refresh Parameters by Device Density
Parameter
Refresh to Active/Refresh
command time
Symbol
tRFC
256Mb 512Mb 1Gb 2Gb 4Gb Units Notes
75 105 127.5 195 327.5 ns 1
Average periodic
refresh interval
0 ℃≤ TCASE ≤ 85℃ 7.8
tREFI 85℃＜ TCASE ≤ 95
℃
3.9
7.8 7.8 7.8 7.8 us 1
3.9 3.9 3.9 3.9 us 1,2
Note:
1: If refresh timing is violated, data corruption may occur and the data must be re-written with valid data before a valid READ can be
executed.
2. This is an optional feature. For detailed information, please refer to “operating temperature condition” in this data sheet.
DDR2 SDRAM speed bins and tRCD, tRP and tRC for corresponding bin
Speed
Parameter
Bin(CL-tRCD-tRP)
CAS Latency
tRCD
tRP*1
tRAS
tRC
DDR2-800
min
min
5-5-5
6-6-6
5
6
12.5
15
12.5
15
45
45
57.5
60
DDR2-667
min
min
4-4-4
5-5-5
4
5
12
15
12
15
45
45
57
60
DDR2-533 DDR2-400 Units Notes
min
min
4-4-4
3-3-3
4
3
tCK
15
15
ns
2
15
15
ns
2
45
40
ns 2,3
60
55
ns
2
Note:
1. 8 bank device Precharge All Allowance: tRP for a Precharge All command for an 8 Bank device will equal to tRP+1*tCK, where tRP
are the values for a single bank Precharge, which are shown in the table above.
2. Refer to Specific Notes 32.
3. Refer to Specific Notes 3.
Rev. 0.4 / Nov 2008
21
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