DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

HA17384HPS 데이터 시트보기 (PDF) - Renesas Electronics

부품명
상세내역
제조사
HA17384HPS Datasheet PDF : 29 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
HA17384SPS/SRP, HA17384HPS/HRP, HA17385HPS/HRP
Electrical Characteristics (cont.)
Current Sensing Part
(The condition is: Ta = 25°C, VIN = 15 V, CT = 3300 pF, RT = 10 kwithout notice)
Item
Symbol Min Typ Max Unit
Test Condition
Note
Voltage gain
AVCS
2.85 3.00 3.15
V/V VFB = 0 V
1
Maximum sensing voltage VthCS
0.9
1.0
1.1
V
Power supply voltage
PSRR
70
dB 12 V VIN 25 V
2
rejection ratio
Input bias current
IBCS
–2
–10
µA VCS = 2 V
Current sensing
response time
tpd
50
100 150
ns Time from when VCS becomes 3
2 V to when output becomes
“L” (2 V)
Notes: 1. The gain this case is the ratio of error amplifier output change to the current-sensing threshold voltage
change.
2. Reference value for design.
3. Current sensing response time tpd is definded a shown in the figure 1.
Vth
VCS
VOUT
(PWM)
tpd
Figure 1 Definition of Current Sensing Response Time tpd
PWM Output Part
Item
Symbol
Output low voltage 1
VOL1
Output low voltage 2
VOL2
Output high voltage 1
VOH1
Output high voltage 2
VOH2
Output low voltage at
standby mode
VOL STB
Rise time
tr
Fall time
tf
Maximum ON duty
Du max
Minimum ON duty
Du min
Note: 1. Pulse application test
Min Typ Max
0.7
1.5
1.5
2.2
13.0 13.5
12.0 13.3
0.8
1.1
80
150
70
130
94
96
100
0
Unit
Test Condition
V losink = 20 mA
V losink = 200 mA
V losource = –20 mA
V losource = –200 mA
V
VIN = 5 V,
losink = 1 mA
ns CL = 1000 pF
ns CL = 1000 pF
%
%
Note
1
1
Rev.3.00 Jun 15, 2005 page 8 of 28

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]