IKA10N60T 데이터 시트보기 (PDF) - Infineon Technologies

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IKA10N60T

Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode

Infineon Technologies 

TrenchStop Series

IKA10N60T

D=0.5

D=0.5

0.2

00K/W

0.1

0 -1K /W

0.05

0.02

0.01

R,(K/W) τ, (s)

1.596

4.622

6

1.985

0.5623

0.3324

0.3531

0.1730

R1

1.288

5.066*10-2

4.152*10-3

6.059*10-4

7.863*10-5

R2

single pulse

C1=τ1/R1 C2=τ2/R2

0 -2K /W

10µs 100µs 1ms 10ms100ms 1s 10s

tP, PULSE WIDTH

Figure 21. IGBT transient thermal resistance

(D = tp / T)

100K/W

1 0 -1K /W

0.2

0.1

0.05

0.02

R,(K/W) τ, (s)

1.418

5.068

6

2.125

0.5890

0.5424

0.6311

0.5061

1.416

6.455*10-2

5.732*10-3

1.019*10-3

1.499*10-4

R1

R2

0.01

single pulse

C1=τ1/R1 C2=τ2/R2

1 0 -2K /W

10µs 100µs 1ms 10ms100ms 1s 10s

tP, PULSE WIDTH

Figure 22. Diode transient thermal

impedance as a function of pulse

width

(D=tP/T)

300ns

250ns

200ns

TJ=175°C

150ns

100ns

50ns

TJ=25°C

0ns

200A/µs 400A/µs 600A/µs 800A/µs

diF/dt, DIODE CURRENT SLOPE

Figure 23. Typical reverse recovery time as

a function of diode current slope

(VR=400V, IF=10A,

Dynamic test circuit in Figure E)

0,8µC

0,7µC

TJ=175°C

0,6µC

0,5µC

0,4µC

0,3µC

TJ=25°C

0,2µC

0,1µC

0,0µC

200A/µs 400A/µs 600A/µs 800A/µs

diF/dt, DIODE CURRENT SLOPE

Figure 24. Typical reverse recovery charge

as a function of diode current

slope

(VR = 400V, IF = 10A,

Dynamic test circuit in Figure E)

Power Semiconductors

9

Rev. 2 Oct-04

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