IM29LV001B 데이터 시트보기 (PDF) - Unspecified
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IM29LV001B Datasheet PDF : 14 Pages
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Preliminary Specification
IMT
b) Write Characteristics:
Parameter
tWC
tAS
tAH
tDS
tDH
tOES
tOEH
tCS
tCH
tCP
tCPH
tWS
tWH
tWP
tWPH
tWHWH1
tWHWH2
tWHWH3
tCEP
tOEP
Description
Write command cycle time
Address setup time
Address hold time
Data setup time
Data hold time
OE# setup time
OE# hold time
CE# setup time
CE# hold time
CE# write pulse width
CE# write pulse width high
WE# setup time
WE# hold time
WE# write pulse width
WE# write pulse width high
Byte programming time
Page erase time
Chip erase time
CE# access time for Data#
Polling and Toggle bit read
OE# access time for Data#
Polling and Toggle bit read
IM29LV001-55
Min Max
55
0
35
20
0
0
0
0
0
25
20
0
0
25
20
30
9
3
55
IM29LV001-70
Min Max
70
0
45
30
0
0
0
0
0
35
30
0
0
35
30
30
9
3
70
IM29LV001-90 IM29LV001-120
Min Max Min Max
90
120
0
0
55
60
40
45
0
0
0
0
0
0
0
0
0
0
45
50
30
35
0
0
0
0
45
50
30
35
30
30
9
9
3
3
90
120
25
35
45
60
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
µs
ms
s
ns
ns
Test Conditions
Input rise and fall time ……………………………… 5 ns
Input pulse levels……………………………………. 0.0 V to 3.0 V
Timing measurement reference level
Input…………………………………………. 1.5 V
Output……………………………………….. 1.5 V
Output loading
55ns and 70 ns parts…………………….. 1 TTL load + 30 pF
90 ns and 120 ns parts…………………… 1 TTL load + 100 pF
This advanced data sheet contains product specifications which are subject to change without notice. Rev. 0.27
Integrated Memory Technologies, Inc.
2285 Martin Ave., STE A, Santa Clara, CA 95050. Tel. (408) 986-1088 Fax (408) 727-8696
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