IRF1104STRR 데이터 시트보기 (PDF) - International Rectifier

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IRF1104STRR

HEXFET® Power MOSFET

International Rectifier 

IRF1104S/L

1000

100

VGS

TOP 15V

10V

8.0V

7.0V

6.0V

5.5V

5.0V

BOTTOM 4.5V

1000

100

VGS

TOP 15V

10V

8.0V

7.0V

6.0V

5.5V

5.0V

BOTTOM 4.5V

10

4.5V

20µs PULSE WIDTH

TJ = 25 °C

1

0.1

1

10

100

VDS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

4.5V

10

20µs PULSE WIDTH

TJ = 175 °C

1

0.1

1

10

100

VDS , Drain-to-Source Voltage (V)

Fig 2. Typical Output Characteristics

1000

100 TJ = 175° C

10

TJ = 25 ° C

1

0.1

4.0

V DS = 50V

20µs PULSE WIDTH

5.0

6.0

7.0

8.0

9.0 10.0

VGS, Gate-to-Source Voltage (V)

Fig 3. Typical Transfer Characteristics

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2.5 ID = 100A

2.0

1.5

1.0

0.5

VGS = 10V

0.0

-60 -40 -20 0 20 40 60 80 100 120 140 160 180

TJ , Junction Temperature( °C)

Fig 4. Normalized On-Resistance

Vs. Temperature

3

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