IXGH20N60B 데이터 시트보기 (PDF) - IXYS CORPORATION

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IXGH20N60B

HiPerFAST™IGBT

IXYS CORPORATION 

IXGH 20N60B

IXGT 20N60B

3.0

6

TJ = 125°C

2.5 RG = 10

5

2.0

4

1.5

3

E(ON)

1.0

2

0.5

E(OFF)

1

0.0

0

0

10

20

30

40

50

IC - Amperes

Fig. 7. Dependence of E and E on I .

ON

OFF

C

15

IC = 20A

VCE = 300V

12

9

6

3

0

0

20

40

60

80 100

Qg - nanocoulombs

Fig. 9. Gate Charge

4

8

TJ = 125°C

3

E(ON)

2

E(ON)

1

E(ON)

IC =40A

IC = 20A

IC = 10A

6

E(OFF)

4

E(OFF)

2

E(OFF)

0

0

0 10 20 30 40 50 60

RG - Ohms

Fig. 8. Dependence of E and E on R .

ON

OFF

G

100

40

10

TJ = -55 to +125°C

RG = 4.7

dV/dt < 5V/ns

1

0.1

0

100 200 300 400 500 600

VCE - Volts

Fig. 10. Turn-off Safe Operating Area

1

D=0.5

D=0.2

0.1 D=0.1

D=0.05

D=0.02

0.01 D=0.01

Single pulse

0.001

0.00001

0.0001

0.001

0.01

Pulse Width - Seconds

Fig. 11. IGBT Transient Thermal Resistance Junction-to-Case

D = Duty Cycle

0.1

1

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