K4E640412E 데이터 시트보기 (PDF) - Samsung

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K4E640412E

16M x 4bit CMOS Dynamic RAM with Extended Data Out

Samsung 

Industrial Temperature

K4E660412E,K4E640412E

HYPER PAGE WRITE CYCLE ( EARLY WRITE )

NOTE : DOUT = OPEN

CMOS DRAM

VIH -

RAS

VIL -

tRASP

¡ó

tRP

tRHCP

VIH -

CAS

VIL -

VIH -

A

VIL -

VIH -

W

VIL -

VIH -

OE

VIL -

tC R P

tASR

tR C D

tRAD

tRAH

tC S H

tASC

tH P C

tCAS

tCAH

ROW

ADDR.

COLUMN

ADDRESS

tHPC

tC P

tCP

tCAS

¡ó

tRSH

tCAS

tASC

tCAH

COLUMN

ADDRESS

tASC tCAH

¡ó

COLUMN

ADDRESS

¡ó

tRAL

tWCS tW C H

tWCS

tW C H

tWCS tWCH

tWP

tWP

¡ó

tW P

tC W L

tCWL

¡ó

¡ó

tCWL

tRWL

DQ0 ~ DQ3(7)

VIH -

VIL -

tDS

tDH

VALID

DATA-IN

tD S tD H

tDS tD H

¡ó

VALID

VALID

DATA-IN

DATA-IN

¡ó

Don′t care

Undefined

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