K4X56163PI-L(F)E/GC6 데이터 시트보기 (PDF) - Samsung

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K4X56163PI-L(F)E/GC6

16Mx16 Mobile DDR SDRAM

Samsung 

K4X56163PI - L(F)E/G

Mobile DDR SDRAM

17. AC Overshoot/Undershoot Specification for Address & Control Pins

Parameter

Maximum peak Amplitude allowed for overshoot area

Maximum peak Amplitude allowed for undershoot area

Maximum overshoot area above VDD

Maximum undershoot area below VSS

Specification

0.9V

0.9V

3V-ns

3V-ns

Maximum Amplitude

Overshoot Area

Volts

(V)

VDD

VSS

Maximum Amplitude

Undershoot Area

Time (ns)

Figure 7. AC Overshoot and Undershoot Definition for Address and Control Pins

18. AC Overshoot/Undershoot Specification for CLK, DQ, DQS and DM Pins

Parameter

Maximum peak Amplitude allowed for overshoot area

Maximum peak Amplitude allowed for undershoot area

Maximum overshoot area above VDDQ

Maximum undershoot area below VSSQ

Specification

0.9V

0.9V

3V-ns

3V-ns

Maximum Amplitude

Overshoot Area

Volts

(V)

VDDQ

VSSQ

Maximum Amplitude

Undershoot Area

Time (ns)

Figure 8. AC Overshoot and Undershoot Definition for CLK, DQ, DQS and DM Pins

- 19 -

October 2007

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